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US 9,431,287 B2Granted
Chemical mechanical planarization process and structures
AssigneeMacronix International Co., Ltd.
InventorsYi Sheng Cheng, Chun Fu Chen, Yung Tai Hung, Chin Ta Su
Life of this patent
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Abstract
A semiconductor device includes a substrate having a first and second region, a first structure and a second structure. The first structure is formed over the substrate in the first region. The first structure has a first height. The second structure is formed over the substrate in the second region. The second structure has a second height different from the first height.
Claims21
A semiconductor device, comprising:
- a substrate including a first region and a second region, the first region having a first surface, the second region having a second surface, the first surface in the first region being a surface of an isolation trench formed at a lower height than the second surface in the second region;
- a first structure formed over the substrate on the first surface in the first region, the first structure having a silicide layer as a top layer, the silicide layer of the first structure formed over a polysilicon layer of the first structure, the silicide layer of the first structure and polysilicon layer of the first structure formed over the first surface of the first region, the first structure having a first height measured from the first surface of the first region to the silicide layer of the first structure;
- a second structure formed over the substrate on the second surface in the second region, the second structure having a silicide layer as a top layer, the silicide layer of the second structure formed over a polysilicon layer of the second structure, the second structure having a second height measured from the second surface of the second region to the silicide layer of the second structure, the second height less than the first height;
- and
- a dielectric structure formed over the substrate between the first structure and the second structure, the dielectric structure in contact with a side wall of the first structure and a side wall of the second structure;
- wherein a height of the dielectric structure adjacent to the first structure is not more than the first height and a height of the dielectric layer adjacent to the second structure is not more than the second height;
- wherein a top surface of the first structure is formed at the same height as a top surface of the second structure;
- wherein a top surface of the dielectric structure is planar to the top surface of the first structure;
- and
- wherein the height of the top surface of the dielectric structure adjacent to the first structure is formed at the same height as the height of the top surface of the dielectric structure adjacent to the second structure.
7 more elements
A method of fabricating a semiconductor device, comprising:
- providing a substrate including a first region and a second region, the first region having a first surface, the second region having a second surface, the first surface in the first region being a surface of an isolation trench formed at a lower height than the second surface in the second region;
- forming a first structure over the substrate on the first surface in the first region, the first structure having a silicide layer formed as a top layer, the silicide layer of the first structure formed over a polysilicon layer of the first structure, the silicide layer of the first structure and polysilicon layer of the first structure formed over the first surface of the first region, the first structure having a first height from the first surface of the first region to the silicide layer of the first structure;
- forming a second structure over the substrate on the second surface in the second region, the second structure having a silicide layer as a top layer, the silicide layer of the second structure formed over a polysilicon layer of the second structure, the second structure having a second height from the second surface of the second region to the silicide layer of the second structure, the second height less than the first height;
- and
- forming a dielectric structure over the substrate between the first structure and the second structure, the dielectric structure in contact with a side wall of the first structure and a side wall of the second structure;
- wherein a height of the dielectric structure adjacent to the first structure is not more than the first height and a height of the dielectric layer adjacent to the second structure is not more than the second height;
- wherein a top surface of the first structure is formed at the same height as a top surface of the second structure;
- wherein a top surface of the dielectric structure is planar to the top surface of the first structure;
- and
- wherein the height of the top surface of the dielectric structure adjacent to the first structure is formed at the same height as the height of top surface of the dielectric structure adjacent to the second structure.
7 more elements
Dependencies are inferred from the claim text.