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US 9,431,285 B2Granted
Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsNaoyoshi Tamura, Keita Nishigaya, Mitsuaki Hori, Hiroe Kawamura
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Abstract
A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.
Claims16
A method of manufacturing a semiconductor device comprising:
- performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate;
- and
- after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere including hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen,
- wherein:
- the first thermal processing comprises a first step and a second step after the first step, the first step is performed at a first pressure, in the first atmosphere and at the first temperature, the second step is performed at a second pressure, in the first atmosphere and at the first temperature, the second pressure is higher than the first pressure,
- a sublimation of the oxide film from the surface is enhanced at the first temperature and the first pressure,
- the first pressure is about vapor pressure of the oxide film at the first temperature, and
- a sublimation of silicon atoms from the surface is suppressed at the first temperature and the second pressure.
5 more elements
Dependencies are inferred from the claim text.