Semiconductor device processing tools and methods for patterning substrates

A method of producing a reduced-pitch pattern on a substrate comprising:

• providing a processing tool including:
• a first subsystem configured to carry out a first subset of processes on a substrate having pattern features of a first pitch, the first subsystem including:
• a first conformal deposition chamber;
• and
• a first etch chamber;
• and
• a second subsystem coupled to the first subsystem and configured to carry out a second subset of processes on the substrate received from the first subsystem and having pattern features of a second pitch, the second pitch less than the first pitch, the second subsystem including:
• a second conformal deposition chamber;
• and
• a second etch chamber;
• and
• receiving a substrate having photoresist features formed on the substrate;
• depositing a first conformal layer over the photoresist features within the processing tool;
• removing first conformal layer material from horizontal surfaces of the substrate to expose the photoresist features within the processing tool;
• removing the photoresist features to form pillars of first conformal layer material within the processing tool;
• depositing a second conformal layer over the pillars of first conformal layer material within the processing tool;
• removing second conformal layer material from horizontal surfaces of the substrate to expose the pillars of first conformal layer material within the processing tool;
• and
• removing the pillars of first conformal layer material to form pillars of second conformal layer material within the processing tool.

A method of producing a reduced-pitch pattern on a substrate comprising:

• providing a processing tool including:
• a first subsystem configured to carry out a first subset of processes on a substrate having pattern features of a first pitch, the first subsystem including:
• a first conformal deposition chamber;
• and
• a first etch chamber;
• and
• a second subsystem coupled to the first subsystem and configured to carry out a second subset of processes on the substrate received from the first subsystem and having pattern features of a second pitch, the second pitch less than the first pitch, the second subsystem including:
• a second conformal deposition chamber;
• and
• a second etch chamber;
• and
• receiving a substrate having photoresist features formed on the substrate;
• depositing a first conformal layer over the photoresist features within the processing tool;
• removing first conformal layer material from horizontal surfaces of the substrate to expose the photoresist features within the processing tool;
• removing the photoresist features to form pillars of first conformal layer material within the processing tool;
• etching a first hard mask layer on the substrate using the pillars of first conformal layer material as an etch mask to form pillars of first hard mask layer material within the processing tool;
• depositing a second conformal layer over the pillars of first hardmask layer material within the processing tool;
• removing second conformal layer material from horizontal surfaces of the substrate to expose the pillars of first hardmask layer material within the processing tool;
• and
• removing the pillars of first hardmask layer material to form pillars of second conformal layer material within the processing tool.