Double patterning method

A computer program product comprising a non-transitory computer-readable storage medium storing computer-readable program code, said computer-readable program code comprising instructions that, when executed by a computer, cause manufacturing equipment to perform a method, said method comprising:

• forming a first mask layer on a substrate;
• performing at least two dopant implantation processes to form, within said first mask layer, a doped region that comprises a dopant and that laterally surrounds multiple undoped regions;
• selectively removing said multiple undoped regions to form a mask pattern above said substrate;
• and,
• performing an etch process to transfer said mask pattern into said substrate to form multiple openings in said substrate,
• said dopant comprising xenon.

A computer program product comprising a non-transitory computer-readable storage medium storing computer-readable program code, said computer-readable program code comprising instructions that, when executed by a computer, cause manufacturing equipment to perform a method, said method comprising:

• forming a first mask layer on a substrate, said substrate comprising a conductor layer;
• performing at least two dopant implantation processes to form, within said first mask layer, a doped region that comprises a dopant and that laterally surrounds multiple undoped regions, said performing of said at least two dopant implantation processes comprising:
• forming a second mask layer on said first mask layer, said second mask layer being patterned such that first portions of said first mask layer are exposed;
• doping said first portions with said dopant;
• removing said second mask layer;
• forming a third mask layer on said first mask layer such that second portions of said first mask layer are exposed;
• doping said second portions with said dopant such that said first portions and said second portions in combination form said doped region that comprises said dopant and that laterally surrounds said multiple undoped regions;
• and,
• removing said third mask layer;
• selectively removing said doped region to form a mask pattern above said substrate;
• and
• performing an etch process to transfer said mask pattern into said substrate so as to form multiple discrete nanowires in said conductor layer.