Removal of defects by in-situ etching during chemical-mechanical polishing processing

A method to process a device, comprising:

• epitaxially growing at least one layer of material on a substrate, the at least one layer of material comprising a defect region;
• depositing a protective layer over at least a portion of the at least one layer of material;
• and
• performing a chemical-mechanical planarization (“CMP”)/etching process comprising
• receiving the device into a planar machine,
• rotating a planar pad and introducing a slurry comprising an etchant configured to chemically etch the defect region,
• planing the device by rotating the planar pad in the presence of the slurry until an area of the defect region is exposed to the slurry, and
• continuing the CMP/etching process until at least a portion of the defect region is chemically removed by the etchant so as to form a void having sidewalls that extend through at least a portion of the at least one layer of material.