Method for photodepositing a particle on a graphene-semiconductor hybrid panel and a semiconductor structure

Abstract

A method for photodepositing a particle on a graphene-semiconductor hybrid panel is disclosed. The method for photodepositing the particle on the graphene-semiconductor includes providing a graphene-semiconductor hybrid panel, dipping the graphene-semiconductor hybrid panel in a fluid containing a precursor, and irradiating the graphene-semiconductor hybrid panel using a light source until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of a graphene sheet. The graphene-semiconductor hybrid panel includes a semiconductor substrate and the graphene sheet adhered to the semiconductor substrate. The light source has an energy equal to or higher than a band gap of the semiconductor substrate. As such, the particle can be directly deposited on the surface of the graphene sheet without the need of modifying the graphene.

Dependencies are inferred from the claim text.