Back to results
US 9,431,246 B2Granted
Semiconductor device with low contact resistance SIC region
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo Shimizu
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor part and a conductive electrode. The first semiconductor part is made of SiC. The SiC contains a first element as an n-type or p-type impurity. The first semiconductor part has a first interface part. The first interface part is configured to have maximum area density of the first element. The c conductive electrode is electrically connected to the first interface part.
Claims19
A semiconductor device comprising:
- a first semiconductor part made of SiC containing a first element, the first element being a first impurity of one of an n-type and a p-type, the first semiconductor part including a first region and a second region;
- and
- a conductive electrode electrically connected to the first semiconductor part, the conductive electrode having a direct contact with the first region,
- the first region being provided between the conductive electrode and the second region,
- a thickness of the first region in a first direction from the semiconductor part toward the conductive electrode being not more than one nanometer, and
- a first area density of the first element in the first region is higher than a second area density of the first element in the second region.
3 more elements
A semiconductor device comprising:
- a substrate made of SiC;
- a first semiconductor region of a first conductivity type provided on the substrate, the first semiconductor region including SiC;
- a second semiconductor region of a second conductivity type provided on a part of the first semiconductor region, the second semiconductor region including SiC;
- a third semiconductor region provided on a part of the second semiconductor region, the third semiconductor region including SiC containing a first element as an impurity of the first conductivity type, the third semiconductor region including a first region and a second region;
- a fourth semiconductor region provided on a part of the second semiconductor region, the fourth semiconductor region arranged with the third semiconductor region in a second direction crossing a first direction from the substrate toward the first semiconductor region, and the fourth semiconductor region including SiC containing a second element as an impurity of the second conductivity type, the fourth semiconductor region including a third region and a fourth region;
- an insulating film provided on the second semiconductor region;
- a control electrode provided on the insulating film;
- a first conductive electrode electrically connected to the first interface part and the second interface part configured, the first conductive electrode having a direct contact with the first region and having a direct contact with the third region;
- and
- a second conductive electrode electrically connected to the substrate,
- the first region being provided between the first conductive electrode and the second region,
- a thickness of the first region in the first direction being not more than one nanometer,
- a first area density of the first element in the first region is higher than a second area density of the first element in the second region,
- the third region being provided between the first conductive electrode and the fourth region,
- a thickness of the third region in the first direction being not more than one nanometer, and
- a third area density of the second element in the third region is higher than a fourth area density of the second element in the fourth region.
13 more elements
Dependencies are inferred from the claim text.