PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film
AssigneeYoutec Co., Ltd.
InventorsTakeshi Kijima, Yuuji Honda
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Abstract
To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.
Claims4
A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (Pb1-XBiX)((TiZr)1-YNbY)O3, wherein:
- X is 0.05 to 0.1;
- and
- Y is 0.05 to 0.1.
A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (Pb1-XBiX)((TiZr)1-YNbY)O3, wherein:
- X is 0.05 to 0.1;
- and
- Y is 0.05 to 0.1 and X═Y.
Dependencies are inferred from the claim text.