Method of manufacturing semiconductor device
AssigneeHitachi Kokusai Electric Inc.
InventorsYoshiro Hirose, Atsushi Sano, Katsuyoshi Harada, Satoshi Shimamoto
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Abstract
A method of manufacturing a semiconductor is provided. The method includes forming a thin film including a predetermined element and a borazine ring skeleton is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas including the predetermined element and a halogen group to the substrate and supplying a reaction gas including a borazine compound to the substrate under a condition where the borazine ring skeleton in the borazine compound is maintained.
Claims11
A method of manufacturing a semiconductor device, the method comprising forming a thin film including a predetermined element and a borazine ring skeleton on a substrate by performing a cycle a first predetermined number of times, the cycle comprising:
- supplying a source gas including the predetermined element and a halogen group to the substrate;
- and
- supplying a reaction gas including a borazine compound to the substrate,
- wherein the cycle is performed under a condition where the borazine ring skeleton in the borazine compound is maintained.
Dependencies are inferred from the claim text.