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US 9,431,239 B1Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChiu-Te Lee, Ke-Feng Lin, Nien-Chung Li, Ching-Nan Hwang, Shih-Teng Huang, Ming-Yen Liu
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess; and forming a gate dielectric layer in the epitaxial layer.
Claims18
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a doped region in the substrate;
- forming a thermal oxide layer on the substrate and the doped region;
- removing the thermal oxide layer to form a first recess;
- forming an epitaxial layer on the substrate and in the first recess after removing the thermal oxide layer;
- and
- forming a gate dielectric layer in the epitaxial layer.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a recess in the substrate;
- an epitaxial layer in the recess and on the substrate, wherein the epitaxial layer comprises:
- a first portion embedded in the recess;
- and
- a second portion on the substrate;
- and
- a gate dielectric layer on the first portion of the epitaxial layer.
5 more elements
Dependencies are inferred from the claim text.