Reactive curing process for semiconductor substrates

A method for semiconductor processing, comprising:

• providing a plurality of semiconductor substrates in a hot wall, batch process chamber of a vertical furnace, wherein the semiconductor substrates are held in a wafer boat;
• flowing H2O2 species into the process chamber to expose the semiconductor substrate to an H2O2 ambient;
• and
• exhausting gases from the process chamber, wherein the conditions of flow, chamber pressure, and chamber temperature are such that the average residence time of the H2O2 species in the process chamber is below about 5 minutes.

A method of manufacturing a semiconductor device on a semiconductor substrate, the method comprising:

• depositing a flowable dielectric film on the substrate using a carbon-free silicon source and a remote NH3 plasma, without addition of oxygen;
• loading the substrate with the flowable dielectric film into a process chamber;
• and
• curing the flowable dielectric film by exposing the substrate to hydrogen peroxide.