Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsRyota Sasajima, Yoshinobu Nakamura
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed.
Claims10
A method of manufacturing a semiconductor device, comprising:
- (a) modifying an outermost surface of a substrate by supplying a nitriding gas to the substrate;
- and
- (b) forming a thin film containing a specific element, oxygen, carbon, and nitrogen on the modified outermost surface of the substrate by performing a cycle one or more times, the cycle comprising sequentially performing:
- (b-1) supplying a specific element-containing gas to the substrate;
- (b-2) supplying an oxidizing gas to the substrate;
- (b-3) supplying a carbon-containing gas to the substrate;
- and
- (b-4) supplying a nitriding gas to the substrate.
A substrate processing apparatus comprising:
- a process chamber configured to accommodate a substrate;
- a specific element-containing gas supply system configured to supply a specific element-containing gas to the substrate in the process chamber;
- a carbon-containing gas supply system configured to supply a carbon-containing gas to the substrate in the process chamber;
- an oxidizing gas supply system configured to supply an oxidizing gas to the substrate in the process chamber;
- a nitriding gas supply system configured to supply a nitriding gas to the substrate in the process chamber;
- and
- a controller configured to control the specific element-containing gas supply system, the carbon-containing gas supply system, the oxidizing gas supply system, and the nitriding gas supply system such that a process of modifying an outermost surface of the substrate by supplying the nitriding gas to the substrate is performed and a process of forming a thin film containing a specific element, oxygen, carbon and nitrogen on the modified outermost surface of the substrate is performed by performing a cycle one or more times, the cycle comprising sequentially performing:
- supplying the specific element-containing gas to the substrate;
- supplying the oxidizing gas to the substrate;
- supplying the carbon-containing gas to the substrate;
- and supplying the nitriding gas to the substrate.
A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of modifying an outermost surface of a substrate by supplying a nitriding gas to the substrate in a process chamber and a process of forming a thin film containing a specific element, oxygen, carbon, and nitrogen on the modified outermost surface of the substrate by performing a cycle one or more times, the cycle comprising sequentially performing:
- supplying a specific element-containing gas to the substrate in the process chamber;
- supplying an oxidizing gas to the substrate in the process chamber;
- supplying a carbon-containing gas to the substrate in the process chamber;
- and
- supplying a nitriding gas to the substrate in the process chamber.
Dependencies are inferred from the claim text.