US 9,431,235 B1 · Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

Abstract

Multilayer dielectric structures are provided with graded composition. For example, a multilayer dielectric structure includes a stack of dielectric films, wherein the dielectric films include at least a first SiCNO (silicon carbon nitride oxide) film and a second SiCNO film. The first SiCNO film has a first composition profile of C, N, and O atoms. The second SiCNO film has a second composition profile of C, N, and O atoms, which is different from the first composition profile of C, N, and O atoms. The composition profiles of C, N and/or O atoms of the constituent dielectric films of the multilayer dielectric structure are customized to enhance or otherwise optimize one or more electrical and/or physical properties of the multilayer dielectric structure.

Claims15

Dependent claims

A semiconductor structure, comprising:

a multilayer dielectric structure comprising a stack of dielectric films, wherein the dielectric films comprise at least a first SiCNO (silicon carbon nitride oxide) film and a second SiCNO film;
wherein the first SiCNO film comprises a first composition profile of C, N and O atoms;
wherein the second SiCNO film comprises a second composition profile of C, N and O atoms;
wherein the first and second composition profiles are different;
and
wherein a total thickness of the multilayer dielectric structure is about 10 nanometers or less.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/695,705Filed 24 Apr 2015

Granted

30 Aug 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification27 codes

H10P 14/6522
The substance being oxygen: introduced into a nitride material, e.g. changing SiN to SiON
H10D 30/792
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: comprising applied insulating layers, e.g. stress liners
H10D 64/021
Manufacture or treatment: using multiple gate spacer layers, e.g. bilayered sidewall spacers
H10P 14/6336
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: in the presence of a plasma [PECVD]

Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

Life of this patent

Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

Life of this patent

Abstract

Claims15