ICP source design for plasma uniformity and efficiency enhancement
AssigneeAdvanced Micro-Fabrication Equipment Inc, Shanghai
InventorsSonglin Xu, Gang Shi, Tuqiang Ni
Life of this patent
Estimating the term…
Abstract
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.
Claims8
A plasma reactor comprising:
- an enclosure having a sidewall and a ceiling forming a dielectric window;
- a substrate support positioned within the enclosure below the dielectric window;
- an RF power applicator positioned above the dielectric window to radiate RF power into the enclosure;
- a plasma gas injector arrangement to supply plasma gas into the enclosure;
- and,
- a baffle situated inside the enclosure and positioned above the substrate support but below the plasma gas injector arrangement so as to radially unevenly restrict flow of the plasma gas;
- wherein the baffle comprises a plate extending radially to the sidewall and having a central aperture and a wall extending from the central aperture upwards towards the coil form a barrier to gas flow, wherein the barrier is radially uneven.
Dependencies are inferred from the claim text.