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US 9,431,144 B2Granted
Indium-containing oxide film and preparing method thereof
AssigneeUp Chemical Co., Ltd.
InventorsWonyong Koh, Byungsoo Kim, Dong Hwan Ma
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Abstract
The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.
Claims10
A method for forming an indium-containing oxide film comprising:
- providing an oxygen-containing gas and an indium compound in a gas state to a substrate to be reacted;
- wherein the indium compound is a liquid at room temperature and includes bis(trimethylsilyl)aminodiethylindium.
Dependencies are inferred from the claim text.