Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices

An electronics system, comprising:

• a processor;
• and
• an One-Time Programmable (OTP) memory operatively connected to the processor, the OTP memory including a plurality of OTP cells, at least one of the OTP cells comprising:
• an OTP element including at least a metal fuse operatively coupled to a first supply voltage line;
• and
• a diode including at least a first active region and a second active region isolated from the first active region, the first active region having a first type of dopant and the second region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, both the first and second active regions residing in a common CMOS well or on an isolated substrate, the second active region being operatively coupled to a second supply voltage line, the first and second active regions being fabricated from sources or drains of CMOS devices,
• wherein the metal fuse is operatively coupled through at least one of a contact and/or a plurality of vias to the first active region of the diode,
• wherein the OTP element is configured to be programmable by applying voltages to the first and second supply voltage lines to generate heat through the at least one the contact and/or the plurality of vias and thereby change the OTP element into a different logic state, and
• wherein the at least one of the OTP cells comprises a jumper to couple at least a portion of the at least one contact and/or a plurality of vias to the metal fuse.

A method for operating an One-Time Programmable (OTP) memory comprises:

• providing a plurality of OTP cells, at least one of the OTP cells includes at least (i) an OTP element including at least one metal fuse coupled to a first supply voltage line;
• and (ii) a diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and the second region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, both the first and second active regions being fabricated from sources or drains of CMOS devices and residing in a common CMOS well or on an isolated substrate, the second active region coupled to a second supply voltage line, the metal fuse being coupled through at least one contact and/or a plurality of vias and through at least one jumper to the first active region of the diode;
• and
• one-time programming a logic state into at least one of the OTP cells by applying voltages to the first and the second voltage lines to generate heat through the at least one jumper.

A One-Time Programmable (OTP) memory, comprising:

• a plurality of OTP cells, at least one of the OTP cells comprising:
• an OTP element including at least a metal fuse operatively coupled to a first supply voltage line;
• and
• a diode including at least a first active region and a second active region isolated from the first active region, the first active region having a first type of dopant and the second region having a second type of dopant, the first active region being associated with a first terminal of the diode, the second active region being associated with a second terminal of the diode, the second active region being operatively coupled to a second supply voltage line,
• wherein the metal fuse is operatively coupled through at least one of a contact and/or a plurality of vias to the first terminal of the diode, and
• wherein the OTP element is configured to be programmable by applying voltages to the first and the second supply voltage lines to generate heat through the at least one of the contact and/or the plurality of vias to thereby change its logic state.

A One-Time Programmable (OTP) memory, comprising:

• a plurality of OTP cells, at least one of the OTP cells comprising:
• an OTP element including at least a metal fuse operatively coupled to a first supply voltage line;
• and
• a diode including at least a first active region and a second active region isolated from the first active region, the first active region having a first type of dopant and the second region having a second type of dopant, the first active region being associated with a first terminal of the diode, the second active region being associated with a second terminal of the diode, the second active region being operatively coupled to a second supply voltage line,
• wherein the metal fuse has an extended area to enhance programming by increasing the resistance of the OTP element, and
• wherein the OTP element is configured to be programmable by applying voltages to the first and the second supply voltage lines to generate heat through the at least one of the contact and/or the plurality of vias to thereby change its logic state.