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US 9,431,121 B2Granted
Read voltage adjustment
AssigneeMicron Technology, Inc.
InventorsKishore K. Muchherla, Sampath K. Ratnam, Asheesh Kwatra
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Abstract
The present disclosure includes apparatuses and methods related to adjusting read voltages of charge-trapping flash memory. An example embodiment apparatus can include a memory array and a controller coupled to the memory array. The controller is configured to adjust a read voltage used to access a portion of the memory array based on a length of time since a last WRITE operation to the portion.
Claims42
An apparatus, comprising:
- a memory array;
- and
- a controller coupled to the memory array, wherein the controller is configured to adjust a read voltage used to access a portion of the memory array based on a length of time since a last WRITE operation to the portion and based on location of the portion in the memory array in relation to a most recent programmed portion.
An apparatus, comprising:
- a memory array;
- and
- a controller coupled to the memory array, wherein the controller is configured to:
- track a portion of a memory to which data was written within a length of time;
- adjust a read voltage when accessing the portion of the memory to which data was written within the length of time based on location of the portion in the memory array;
- and
- not adjust the read voltage when accessing a portion of the memory other than the portion of the memory to which data was written within the length of time based on location of the other portion in the memory array.
4 more elements
An apparatus, comprising:
- a memory array;
- and
- a controller coupled to the memory array, wherein the controller is configured to:
- record a last written page physical address associated with a WRITE operation;
- translate a logical block address to a physical address;
- compare a physical address associated with a READ operation with the last written page physical address associated with a WRITE operation;
- and
- use an offset to the read voltage when the physical address associated with the READ operation is within a predetermined number of pages of the last written page physical address, wherein the controller is configured to factor a quick charge gain (QCG) voltage into a read window budget.
5 more elements
A method comprising:
- tracking, with a controller, a portion of a memory to which data was written;
- adjusting, with the controller, a read voltage when accessing the portion of the memory to which data was written within a predetermined time period based on location of the portion in a memory array;
- and
- not adjusting the read voltage when accessing a portion of the memory other than the portion of the memory to which data was written within the predetermined time period based on location of the other portion in the memory array.
1 more element
A method comprising:
- adjusting, with a controller, a read voltage when accessing a portion of a memory for which a memory cell charge associated with a WRITE operation has not settled to a steady state, wherein adjusting the read voltage includes adding an offset to the read voltage determined based on location involved in a READ operation;
- and
- not adjusting the read voltage when accessing a portion of the memory for which a memory cell charge associated with a WRITE operation has settled to a steady state.
Dependencies are inferred from the claim text.