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US 9,431,115 B2Granted
Erase system and method of nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorSang-Wan Nam
Life of this patent
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Abstract
An erase system and method of a nonvolatile memory device includes supplying an erase voltage to a plurality of memory cells of a nonvolatile memory, performing a read operation with a read voltage to word lines of the plurality of memory cells, and performing an erase verification operation with an erase verification voltage to at least one of the word lines of the plurality of memory cells, the erase verification voltage lower than the read voltage.
Claims20
A nonvolatile memory device, comprising:
- a memory cell array having a substrate and a plurality of blocks each having a plurality of strings each having a plurality of memory cells, the plurality of strings formed on the substrate in a direction perpendicular to the substrate;
- a control unit to performing a read operation with a voltage to word lines of the plurality of strings;
- and
- a page buffer unit to store information on one or more off strings among the plurality of strings determined by the read operation,
- wherein the control unit performs an erase verification operation with an erase verification voltage to at least one of the word lines of the plurality of memory cells, and the erase verification voltage is lower than the read voltage.
2 more elements
An operating method of a memory system, the method comprising:
- generating a command from a controller to perform an erase operation on a nonvolatile memory device comprising a memory cell array having a substrate and a plurality of strings each having a plurality of memory cells, the plurality of strings formed on the substrate in a direction perpendicular to the substrate;
- and
- performing the erase operation in the nonvolatile memory device according to the generated command, the erase operation including:
- performing an erase operation on the plurality of strings;
- performing a read operation with a read voltage to word lines of the plurality of memory cells;
- determining one or more strings as an off string according to the performed read operation;
- processing an erase verification pass on the off string;
- and
- performing an erase verification operation with an erase verification voltage to the word lines of the plurality of strings, the erase verification voltage lower than the read voltage.
6 more elements
Dependencies are inferred from the claim text.