Resistive devices and methods of operation thereof
AssigneeAdesto Technologies Corporation
InventorsForoozan Sarah Koushan, Michael A. Van Buskirk
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AssigneeAdesto Technologies Corporation
InventorsForoozan Sarah Koushan, Michael A. Van Buskirk
Estimating the term…
In accordance with an embodiment of the present invention, a method of operating a resistive switching device includes applying a signal including a pulse on a first access terminal of an access device having the first access terminal and a second access terminal. The second access terminal is coupled to a first terminal of a two terminal resistive switching device. The resistive switching device has the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period, a second ramp from the second voltage to a third voltage over a second time period, and a third ramp from the third voltage to a fourth voltage over a third time period. The second ramp and the third ramp have an opposite slope to the first ramp. The sum of the first time period and the second time period is less than the third time period.
A method of operating a memory cell comprising a resistive switching device having a first terminal and a second terminal and an access device having a first access terminal and a second access terminal, the second access terminal being coupled to the first terminal of the resistive switching device, the method comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.