Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture

A package, comprising:

• a first semiconductor device, a second semiconductor device, and a third semiconductor device stacked in a first direction;
• the first semiconductor device including
• a first through via providing a first electrical connection in the first direction between a first side and a second side opposite the first side of the first semiconductor device;
• and
• a first circuit, the first circuit provides a first reference potential at a first circuit output, the first circuit output is electrically connected to the first through via at the first side when the first semiconductor device is in a normal mode of operation;
• and
• the second semiconductor device including
• a second through via providing a second electrical connection in the first direction between a first side and a second side opposite the first side of the second semiconductor device wherein
• the second semiconductor device includes a second circuit having a second circuit output electrically connected to the first through via at the second side of the first semiconductor device and the third semiconductor device is electrically connected to the second through via at the second side of the second semiconductor device to receive the first reference potential, the first circuit and the second circuit provide the first reference potential.