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US 9,431,081 B2Granted
Memory device
AssigneeSK hynix Inc.
InventorsSoo-Young Jang, Hyun-Woo Lee
Life of this patent
Estimating the term…
Abstract
A memory device includes a plurality of normal word lines arranged at a first distance from each other, a redundant word line arranged at a second distance, which is greater than the first distance from a normal word line adjacent to the redundant word line, among the normal word lines, and a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line when the frequently activated word line is detected.
Claims23
A memory device comprising:
- a plurality of normal word lines arranged at a first distance from each other;
- a redundant word line arranged at a second distance, which is greater than the first distance, from a normal word line adjacent to the redundant word line, among the normal word lines;
- a dummy word line arranged between the redundant word line and the normal word line adjacent to the redundant word line;
- and
- a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line when the frequently activated word line is detected among the normal word lines,
- wherein the distance between the normal word line adjacent to the redundant word line and the dummy word line is greater than the first distance.
3 more elements
A memory device comprising:
- a plurality of normal word lines;
- a redundant word line;
- a dummy word line arranged between the redundant word line and a normal word line adjacent to the redundant word line, among the normal word lines;
- and
- a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line, when the frequently activated word line is detected among the normal word lines,
- wherein memory cells coupled to the normal word line adjacent to the redundant word line have a longer retention time than memory cells coupled to a normal word line which is not adjacent to the redundant word line.
3 more elements
A memory device comprising:
- a plurality of normal word lines;
- a redundant word line;
- and
- a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line when the frequently activated word line is detected among the normal word lines,
- wherein memory cells coupled to a normal word line adjacent to the redundant word line, among the normal word lines, have a longer retention time than memory cells coupled to a normal word line which is not adjacent to the redundant word line.
2 more elements
Dependencies are inferred from the claim text.