Nonvolatile memory device and method of driving word line of the nonvolatile memory
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Won Park, Kitae Park, Sang-Won Shim
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Abstract
A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.
Claims19
A nonvolatile memory device comprising:
- a memory cell array including a plurality of memory blocks having a plurality of strings formed in a direction perpendicular to a substrate and connected between bit lines and a common source line;
- an address decoder selecting one of the memory blocks in response to an address;
- an input/output circuit storing data to be programmed in memory cells connected to a selected word line among word lines of the selected memory block during a program operation or storing data read from memory cells connected to the selected word line during a read or verify operation;
- a voltage generation circuit generating word line voltages applied to the selected word line and unselected word lines;
- and
- a control logic controlling the address decoder, the input/output circuit and the voltage generation circuit during the program operation, the read operation and the verify operation,
- wherein at least one of the word line voltages comprises an offset pulse and a target pulse, the offset pulse comprises an offset, such that when the target pulse is a negative voltage, a level of the offset pulse is lower than a level of the target pulse for at least a predetermined time, else when the target pulse is a positive voltage, a level of the offset pulse is higher than a level of the target pulse for at least a predetermined time.
A word line driving method for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings formed in a direction perpendicular to a substrate and connected between bit lines and a common source line, the word line driving method comprising:
- applying an offset pulse to a word line for a predetermined time;
- and
- applying a target pulse having a level that is higher or lower than a level of the offset pulse to the word line after the predetermined time,
- wherein the target pulse is one of a program voltage, a pass voltage, a read pass voltage, a read voltage and a verify voltage depending on an operation mode of the nonvolatile memory device, such that when the target pulse is a negative voltage, a level of the offset pulse is lower than a level of the target pulse for at least a predetermined time, else when the target pulse is a positive voltage, a level of the offset pulse is higher than a level of the target pulse for at least the predetermined time.
A storage device comprising:
- at least one nonvolatile memory device generating a word line voltage having an offset pulse and a target pulse;
- and
- a memory controller controlling the at least one nonvolatile memory device,
- wherein when the target pulse is a negative voltage, a level of the offset pulse is lower than a level of the target pulse for at least a predetermined time, else when the target pulse is a positive voltage, level of the offset pulse is higher than a level of the target pulse for at least a predetermined time.
Dependencies are inferred from the claim text.