Method for programming data, memory storage device and memory control circuit unit
AssigneePhison Electronics Corp.
InventorMing-Jen Liang
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AssigneePhison Electronics Corp.
InventorMing-Jen Liang
Estimating the term…
A method for programming data, a memory storage device and a memory control circuit unit are provided. The method includes: receiving a writing command which instructs to write data to a logical address belonging to a logical programming unit; if a physical erasing unit of a physical programming unit which the logical programming unit is mapped to is a first type physical erasing unit, programming the data and a parity code corresponding to the data into the physical programming unit according to a first code rate; and if the physical erasing unit is a second type physical erasing unit, programming the data and the parity code corresponding to the data into the physical programming unit according to a second code rate. The first code rate is higher than the second code rate. Therefore, the lifespan of the physical erasing unit having a higher bit error rate may be extended.
A method for programming data, for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and each of the physical erasing units comprises a plurality of physical programming units, the method comprising:
A memory storage device, comprising:
A memory control circuit unit, for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and each of the physical erasing units comprises a plurality of physical programming units, the memory control circuit unit comprising:
Dependencies are inferred from the claim text.