Pattern forming process and shrink agent
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Masayoshi Sagehashi, Teppei Adachi
Life of this patent
Estimating the term…
Abstract
A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a copolymer comprising recurring units having an α-trifluoromethylhydroxy or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.
Claims8
A pattern forming process comprising the steps of:
- applying a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted carboxyl group, an acid generator and an organic solvent onto a substrate,
- prebaking to form a resist film,
- exposing the resist film to high-energy radiation,
- baking the film,
- developing the exposed resist film in an organic solvent-based developer to form a negative pattern,
- applying a shrink agent onto the negative pattern, the shrink agent being a solution of a copolymer comprising recurring units having an α-trifluoromethylhydroxy and/or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a solvent selected from the group consisting of ether solvents of 6 to 12 carbon atoms, alcohol solvents of 4 to 10 carbon atoms, hydrocarbon solvents of 6 to 12 carbon atoms, ester solvents of 6 to 16 carbon atoms, and ketone solvents of 7 to 16 carbon atoms,
- baking, and
- removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.
Dependencies are inferred from the claim text.