Lithography process
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorSebastien Pauliac
Life of this patent
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Abstract
A lithography method including: a preparation, during which a resist layer is deposited on a substrate, and a preliminary lithography carried out to define at least one preliminary pattern in the resist layer, and during the preliminary lithography, a formation of at least one positioning mark forming a relief in the resist layer. The method further includes at least one subsequent lithography applied to the resist layer and including: a preliminary positioning including positioning a lithography mechanism as a function of the at least one positioning mark, and at least one formation of additional patterns in the resist layer using the lithography mechanism positioned as a function of the at least one positioning mark.
Claims23
A lithography method comprising:
- a preparation, during which a resist layer is deposited on a substrate;
- a preliminary lithography carried out to define at least one preliminary pattern in the resist layer, wherein the preliminary lithography comprises nanoimprinting, during which a mold provided with reliefs penetrates into the resist layer to generate in a single step the at least one preliminary pattern and at least one positioning mark forming a pattern in the resist layer, at least some of the patterns generated by the mold having different depths;
- and
- at least one subsequent lithography applied to the resist layer and including:
- a preliminary positioning including positioning a lithography apparatus as a function of the at least one positioning mark;
- at least one formation of additional patterns in the resist layer using the lithography apparatus positioned as a function of the at least one positioning mark, the formation of the additional patterns comprising exposure of at least part of a preliminary pattern,
- wherein the preliminary lithography defines first zones having a first thickness and second zones each having a thickness smaller than the first thickness, and wherein the at least one subsequent lithography is carried out to make the resist layer disappear at least partly at least some of the second zones.
A lithography method comprising:
- a preparation, during which a resist layer is deposited on a substrate;
- a preliminary lithography carried out to define at least one preliminary pattern in the resist layer, wherein the preliminary lithography comprises nanoimprinting, during which a mold provided with reliefs penetrates into the resist layer to generate in a single step the at least one preliminary pattern and at least one positioning mark forming a pattern in the resist layer, at least some of the patterns generated by the mold having different depths;
- and
- at least one subsequent lithography applied to the resist layer and including:
- a preliminary positioning including positioning a lithography apparatus as a function of the at least one positioning mark;
- and
- at least one formation of additional patterns in the resist layer using the lithography apparatus positioned as a function of the at least one positioning mark, the formation of the additional patterns comprising exposure of at least part of a preliminary pattern,
- wherein
- the resist layer includes a positive photosensitive resist, wherein the formation of additional patterns in the resist layer comprises photolithography,
- the exposure comprises irradiation of one part at least of the at least one preliminary pattern,
- the nanoimprinting is carried out so that a residue of resist is made to appear at a bottom of a hollow formed by the preliminary pattern, and
- the subsequent lithography comprises photolithography comprising irradiation carried out to irradiate the resist residue at least partly to make the resist residue at the bottom of the hollow disappear or to create at least one opening extending from the hollow to the substrate.
Dependencies are inferred from the claim text.