Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.
Claims12
A semiconductor device comprising:
- a first conductive film on a substrate;
- an IC chip whose first electrode is connected to the first conductive film through a conductive particle;
- a second conductive film connected to a second electrode of the IC chip through a conductive particle;
- and
- an FPC connected to the second conductive film through a conductive particle,
- wherein the first conductive film comprises a region overlapping with a sealing material.
A semiconductor device comprising:
- a first conductive film on a substrate;
- an IC chip whose first electrode is connected to the first conductive film through a conductive particle;
- a second conductive film connected to a second electrode of the IC chip through a conductive particle;
- and
- an FPC connected to the second conductive film through a conductive particle,
- wherein the first conductive film comprises a region overlapping with a sealing material, and
- wherein the first conductive film and the second conductive film is a same layer.
Dependencies are inferred from the claim text.