# US 9,428,843 B2 · Rare earth oxyorthosilicate scintillation crystals

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- Number: US 9,428,843 B2
- Document ID: US9428843B2
- Status: Granted
- Kind: B2
- Application number: 14/166,171
- Filed: 2014-01-28
- Published: 2014-09-18
- Granted: 2016-08-30
- Earliest claimed: 2013-03-14
- Assignees: Siemens Medical Solutions USA, Inc.
- Applicants: Siemens Medical Solutions USA, Inc.
- Inventors: Brant Quinton; Mark S. Andreaco; Troy Marlar; Peter Carl Cohen; Merry A. Koschan
- Web page: https://patentgrep.com/patent/US9428843B2

## CPC

- C30B 29/34: Silicates
- C09K 11/77742: {Silicates}
- C30B 1/02: by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence)
- C30B 1/10: by solid state reactions or multi-phase diffusion
- C30B 15/00: Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00)
- C30B 29/28: with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
- C30B 33/02: Heat treatment (C30B33/04, C30B33/06 take precedence)
- C30B 33/08: Etching
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice. Axis orientation can be further utilized to control the uniformity of surface finish of chemically etched crystal.

## Claims

### Claim 1

A method of making a scintillator component, comprising:
cutting an elongated monocrystalline scintillator element from a volume of the monocrystalline scintillator material, the elongated scintillator element having a longitudinal axis at least generally aligned with a first selected crystallographic axis; and
subjecting the elongated scintillator element to annealing under one or more conditions,
the first crystallographic axis being selected at least partially to achieve a minimum value of, or amount of improvement in, a scintillation property of the elongated scintillator element by the annealing under the one or more conditions.

### Claim 2 (depends on 1)

The method of claim 1, the monocrystalline scintillator material comprising a rare-earth oxyorthosilicate scintillator material.

### Claim 3 (depends on 2)

The method of claim 2, wherein the rare-earth oxyorthosilicate scintillator material comprises a lutetium oxyorthosilicate.

### Claim 4 (depends on 2)

The method of claim 2, wherein subjecting the elongated scintillator element to annealing under the one or more conditions comprises annealing the elongated scintillator element in an atmosphere of air, N2, Ar, N2 with 0-20% O2, Ar with 0-20% O2, mixtures of N2, or Ar with CO2 and 0-20% O2.

### Claim 5 (depends on 2)

The method of claim 2, wherein the rare-earth oxyorthosilicate scintillator material includes with an activator and a codopant of Group 1, 2, 3, 7 or 12 of periodic table of elements, or any combination of the codopants.

### Claim 6 (depends on 2)

The method of claim 2, further comprising growing the volume of the monocrystalline scintillator material from a melt by forming a substantially cylindrical boule from the melt, the substantially cylindrical boule having a longitudinal axis generally aligned with the first crystallographic axis.

### Claim 7 (depends on 6)

The method of claim 6, wherein the growing the volume of the monocrystalline scintillator material from a melt comprises growing the volume of the monocrystalline scintillator material from a seed crystal by increasing a distance between the seed crystal from a surface of the melt and forming a tapered portion of the monocrystalline scintillator material having an apex substantially at the seed crystal and base portion, the tapered portion defining a height from the base portion to the apex and a width of the base portion, the height being from about 0 to about 0.8 of the width of the base portion.

### Claim 8 (depends on 2)

The method of claim 2, wherein the longitudinal axis of the elongated scintillator element is within about 20° from first crystallographic axis.

### Claim 9 (depends on 8)

The method of claim 8, wherein the longitudinal axis of the elongated scintillator element is within about 10° from first crystallographic axis.

### Claim 10 (depends on 2)

The method of claim 2, the elongated scintillator element defining a first side surface generally parallel to the longitudinal axis, the first side surface defining a second crystallographic orientation, the method further comprising subjecting the elongated scintillator to chemical etching, the second crystallographic orientation being selected to achieve a surface quality of the first side surface by the chemical etching.

### Claim 11 (depends on 10)

The method of claim 10, the elongated scintillator element further defining a second side surface generally parallel to the longitudinal axis, the second side surface defining a third crystallographic orientation generally transverse to the second crystallographic orientation, the third crystallographic orientation being selected achieve a substantially same optical surface quality as the first side surface.

### Claim 12 (depends on 10)

The method of claim 10, wherein the first crystallographic axis is [1 0 0], [1 1 1], [4 3 2] or [0 13].

### Claim 13 (depends on 12)

The method of claim 12, wherein the rare-earth oxyorthosilicate scintillator material comprises a lutetium oxyorthosilicate.

### Claim 14 (depends on 7)

The method of claim 7, wherein the opening angle is between about 165° and about 175°.

### Claim 15

A method of making a scintillator component, comprising:
growing a volume of the monocrystalline scintillator material from a melt by forming a substantially cylindrical boule from the melt, the substantially cylindrical boule having a longitudinal axis generally aligned with a first crystallographic axis;
cutting a slab from the boule, the slab having a top and bottom surfaces defining a longitudinal axis generally aligned with a first crystallographic axis;
cutting an elongated monocrystalline scintillator element from the slab, the elongated scintillator element having a longitudinal axis at least generally aligned with the first crystallographic axis; and
subjecting the slab to annealing under one or more conditions,
the crystallographic axis being selected at least partially to achieve a minimum value of, or amount of improvement in, a scintillation property of the elongated scintillator element by the annealing under the one or more conditions.

### Claim 16 (depends on 15)

The method of claim 15, wherein the monocrystalline scintillator material comprises an LSO crystal, and the first crystallographic axis is generally aligned with the [1 0 0] or [1 1 1] pole of the LSO crystal.

### Claim 17 (depends on 15)

The method of claim 15, the crystallographic axis being selected at least to further achieve a minimum level of mechanical stability.