US 9,428,838 B2Granted

Plasma processing method and plasma processing apparatus

AssigneeTokyo Electron Limited

InventorMasayuki Sawataishi

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Abstract

Disclosed are a plasma processing method and a plasma processing apparatus which collectively perform etching under the same etching conditions while suppressing a shape abnormality. The multilayer film material has a polysilicon layer, a first metal layer formed on the polysilicon layer, and a hard mask layer which contains a tungsten layer formed on the first metal layer. In the method, plasma is generated by a mixed gas of a chloride-containing gas which contains a compound containing chlorine and silicon, a compound containing chlorine and boron, or a compound containing chlorine and hydrogen, a chlorine-containing gas which contains chlorine, and a processing gas which contains carbon and fluorine, and the hard mask layer is used as an etching mask so as to perform the etching from a top surface of the first metal layer to a bottom surface of the polysilicon layer.

Claims8

Dependent claims

A plasma processing method comprising:

providing a multilayer film material in a processing container where the multilayer film material is formed with a polysilicon layer, a first metal layer formed on the polysilicon layer, and a hard mask layer containing a tungsten layer formed on the first metal layer with a predetermined pattern;
providing a mixed gas comprising:
(a) a chloride-containing gas which includes a compound comprising:
(1) a compound containing chlorine and silicon, (2) a compound containing chlorine and boron, or (3) a compound containing chlorine and hydrogen;
(b) a chlorine-containing gas which contains chlorine;
and (c) a processing gas which contains carbon and fluorine;
and controlling a flow rate of each of the chloride-containing gas which includes a compound, the chlorine-containing gas which contains chlorine, and the processing gas;
and
generating plasma with the mixed gas and etching the multilayer film material from a top surface of the first metal layer to a bottom surface of the polysilicon layer with a same etching condition using the patterned hard mask layer as an etching mask.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/242,273Filed 1 Apr 2014
Priority: JP 2013-0775753 Apr 2013
Published: US 2014/0299571 A19 Oct 2014
Granted: 30 Aug 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

C23F 1/12
Etching compositions: gaseous compositions
C23F 4/00
Processes for removing metallic material from surfaces, not provided for in group
H01J 37/32091
Radio frequency generated discharge: the radio frequency energy being capacitively coupled to the plasma
H10P 50/267
By vapour etching only: using plasmas