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US 9,428,836 B2Granted
Electroless deposition of continuous cobalt layer using complexed Ti3+ metal ions as reducing agents
AssigneeLam Research Corporation
InventorsEugenijus Norkus, Ina Stankeviciene, Aldona Jagminiene, Aniruddha Joi, Loreta Tamasauskaite-Tamasiunaite, Yezdi Dordi, Zita Sukackiene
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Abstract
A solution for electroless deposition of cobalt is provided. A reducing agent of Ti3+ ions is provided to the solution. Co2+ ions are provided to the solution.
Claims20
A solution for electroless deposition of cobalt, comprising:
- a complexed reducing agent of Ti3+ ions;
- and
- Co2+ ions, wherein the solution further comprises amine ligands.
A method for providing an electroless plating of a cobalt containing layer, comprising:
- providing a Ti3+ concentrated stock solution;
- providing a Co2+ concentrated stock solution;
- combining a flow from the Ti3+ concentrated stock solution with a flow from the Co2+ concentrated stock solution and water to provide a mixed electrolyte for electrolessly depositing Co;
- and
- exposing a substrate to the mixed electrolyte for electrolessly depositing Co;
- wherein exposing the wafer to the mixed electrolyte for electrolessly depositing Co, comprises:
- providing a solution temperature between 20° to 25° C., inclusive;
- and
- providing a pH of between 6 and 10, inclusive.
6 more elements
A method for providing an electroless plating of a cobalt layer, comprising:
- providing a solution for electroless deposition of cobalt, comprising:
- Ti3+ ions;
- and
- Co2+ ions, wherein a ratio of Ti3+ ions to Co2+ ions is between 5:1 and 1:5;
- and
- exposing a substrate to the solution for electroless deposition of cobalt, wherein the solution further comprises amine ligands.
3 more elements
Dependencies are inferred from the claim text.