# US 9,428,835 B2 · Cobalt base film-forming method, cobalt base film-forming material, and novel compound

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- Number: US 9,428,835 B2
- Document ID: US9428835B2
- Status: Granted
- Kind: B2
- Application number: 14/349,037
- Filed: 2012-10-04
- Published: 2014-09-04
- Granted: 2016-08-30
- Earliest claimed: 2011-10-07
- Assignees: Gas-Phase Growth Ltd.; Tokyo Electron Limited
- Applicants: Gas-Phase Growth Ltd.; Tokyo Electron Limited
- Inventors: Hideaki Machida; Masato Ishikawa; Hiroshi Sudoh; Yumiko Kawano; Kazutoshi Iwai
- Web page: https://patentgrep.com/patent/US9428835B2

## CPC

- C23C 18/08: characterised by the deposition of metallic material
- C07F 15/065: {without a metal-carbon linkage}
- C23C 16/18: from metallo-organic compounds
- C23C 18/04: Pretreatment of the material to be coated (C23C18/06 takes precedence)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

## Claims

### Claim 1

A method for forming a cobalt base film, the method comprising:
transporting bis(N,N′-diisopropyl-propionamidinate)cobalt to a film formation chamber; and
forming a cobalt base film on a substrate by decomposition of the bis(N,N′-diisopropyl-propionamidinate)cobalt transported to the film formation chamber;
wherein:
the film formation process comprises at least a first film formation process and a second film formation process;
the second film formation process occurs after the first film formation process;
an internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process;
in the first film formation process,
the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and
the film formation chamber is not supplied with H2;
in the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2; and
(the H2)/(the NH3 and/or NH3 product compound) is 0.0001 to 2 (molar ratio).

### Claim 2 (depends on 1)

The method for forming a cobalt base film according to claim 1, wherein:
the bis(N,N′-diisopropyl-propionamidinate)cobalt is added to a solvent; and
the bis(N,N′-diisopropyl-propionamidinate)cobalt is transported by bubbling.

### Claim 3 (depends on 2)

The method for forming a cobalt base film according to claim 2, wherein the solvent is a hydrocarbon compound.

### Claim 4 (depends on 2)

The method for forming a cobalt base film according to claim 2, wherein the solvent is an ether compound.

### Claim 5 (depends on 2)

The method for forming a cobalt base film according to claim 2, wherein the solvent comprises N,N′-diisopropyl-propionamidine.

### Claim 6 (depends on 1)

The method for forming a cobalt base film according to claim 1, wherein the cobalt base film is formed by a chemical vapor deposition.

### Claim 7 (depends on 1)

The method for forming a cobalt base film according to claim 1, wherein the cobalt base film is formed by an atomic layer control growth method.

### Claim 8 (depends on 1)

The method for forming a cobalt base film according to claim 1, wherein the heating in which the substrate is heated under the NH3 atmosphere occurs after the film formation process.

### Claim 9 (depends on 1)

The method for forming a cobalt base film according to claim 1, wherein the heating in which the substrate is heated under NH3 and H2 atmosphere occurs after the film formation process.

### Claim 10 (depends on 1)

The method for forming a cobalt base film according to claim 1, wherein the heating in which the substrate is heated under NH3 atmosphere occurs before the first film formation process.

### Claim 11 (depends on 1)

The method for forming a cobalt base film according to claim 1, wherein the heating in which the substrate is heated under NH3 and H2 atmosphere occurs before the first film formation process.