Self-bonding of chemically vapor deposited SiC articles
AssigneeAdvanced Bonding Technologies, Inc.
InventorsAlina Chand, Ronald H. Chand, Stephen G. DiPietro, Vimal K. Pujari
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Abstract
Method and system for bonding two or more CVD SiC articles together without the use of interface materials using applied forces from about 0.0035 MPa to about 0.035 MPa. The articles are pretreated for bonding. Graphite or other fixtures are used to apply forces in a vacuum or inert gas environment. Temperatures from about 1900° C. to about 2200° C. are used to initiate a β→α transition in the SiC to create bonded CVS SiC articles.
Claims20
A method of bonding a plurality CVD SiC articles together, comprising
- providing a furnace;
- providing a plurality CVD SiC articles to the furnace, wherein the effective separation between the interfaces of the articles is approximately 20 micron or less;
- applying forces from about 0.0035 to about 0.035 MPa at the interfaces of the articles to be bonded;
- processing at temperatures ranging from about 1900° C. to about 2200° C.;
- and
- initiating a β→α SiC phase transformation, thereby bonding the SiC articles together.
A method bonding a plurality CVD SiC articles together, comprising
- providing a furnace;
- providing a plurality CVD SiC articles to the furnace, wherein the effective separation between the interfaces of the articles is approximately 20 micron or less;
- applying forces from about 0.0035 to about 0.035 MPa at the interfaces of the articles to be bonded with one or more graphite fixtures;
- processing at temperatures ranging from about 1900° C. to about 2200° C.;
- and
- initiating a β→α SiC phase transformation, thereby bonding the SiC articles together.
Dependencies are inferred from the claim text.