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US 9,428,381 B2Granted
Devices with thinned wafer
AssigneeInfineon Technologies AG
InventorsAndre Brockmeier, Christian Griessler, Katharina Maier, Peter Zorn, Kai-Alexander Schreiber, Francesco Solazzi
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Abstract
Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.
Claims11
A method, comprising:
- irreversibly bonding a semiconductor main wafer to a glass carrier wafer at a front side of the semiconductor main wafer,
- thinning the semiconductor main wafer from a back side of the semiconductor main wafer,
- selectively removing material from the back side of the semiconductor main wafer,
- irreversibly bonding an additional glass carrier wafer at the back side of the semiconductor main wafer,
- wherein the glass carrier wafer and the additional glass carrier wafer are directly bonded to the main wafer.
2 more elements
Dependencies are inferred from the claim text.