Methods and structures for thin-film encapsulation and co-integration of same with microelectronic devices and microelectromechanical systems (MEMS)

A microshell structure, comprising:

• an upper microshell layer disposed over a MEMS region and an underlying substrate;
• at least one open cavity defined under the upper microshell layer;
• and
• one or more microshell support lattice members that extend downward from the underside of the upper microshell layer into the open cavity defined under the upper micro shell layer, each of the lattice members terminating within the open cavity above the MEMS region to form an open gap between a base of each of the microshell support lattice members and a top of the MEMS region.

A microshell structure, comprising:

• an upper microshell layer disposed over a MEMS region and an underlying substrate, the MEMS region including a metallization layer overlain by an electrically insulative material layer and a MEMS structural layer above the electrically insulative material layer, and a pad region with a pad opening to the metallization layer through the MEMS structural layer and the electrically insulative material;
• at least one open cavity defined under the upper microshell layer;
• one or more upper release holes defined in the upper microshell layer;
• an opening defined through the upper microshell layer over the pad region to the MEMS metallization layer;
• and
• an electrically conductive sealing layer disposed on the upper microshell layer that seals the upper release holes in the upper microshell layer, the electrically conductive sealing layer contacting the metallization layer of the MEMS region through the pad opening to form a shadow mask conductive electrical pad.