Copper alloy bonding wire for semiconductor

A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of 0.13 to 1.15% by mass of Pd, at least one of Ag and Au in a total amount of 0.0005 to 0.07% by mass, and a remainder consisting of copper,

• wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.

A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of more than 0.5% and not more than 1.15% by mass of Pd, at least one of Ti:

• 0.0005 to 0.01% by mass and B:
• 0.0005 to 0.007% by mass, and a remainder consisting of copper,
• wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.

A copper alloy bonding wire for semiconductor manufactured by wire drawing of a copper alloy, the copper alloy consisting of more than 0.5% and not more than 1.15% by mass of Pd, at least one of Ag and Au in a total amount of 0.0005 to 0.07% by mass, at least one of Ti:

• 0.0005 to 0.01% by mass and B:
• 0.0005 to 0.007% by mass, and a remainder consisting essentially of copper,
• wherein a copper oxide formed on a surface of the copper alloy bonding wire has an average film thickness of 0.0005 to 0.02 μm.