RRAM cell structure with laterally offset BEVA/TEVA

A method of forming a resistive random access memory (RRAM) device, comprising:

• forming a bottom electrode over a bottom electrode via, wherein the bottom electrode comprises a recess overlying an opening in a dielectric protection layer surrounding the bottom electrode via;
• forming a variable resistive dielectric layer over the bottom electrode;
• forming a top electrode over the variable resistive dielectric layer;
• forming sidewall spacers abutting opposing sides of the top electrode;
• and
• forming a top electrode via having a smaller width than the top electrode and vertically extending outward from an upper surface of the top electrode at a position laterally offset from the recess.

A method of forming a resistive random access memory (RRAM) device, comprising:

• forming a bottom electrode layer over a bottom electrode via layer overlying a conductive metal region;
• forming a variable resistive dielectric layer over the bottom electrode layer;
• forming a top electrode layer over the variable resistive dielectric layer;
• patterning the top electrode layer to form a top electrode;
• forming sidewall spacers along sides of the top electrode;
• patterning the bottom electrode layer and the bottom electrode via layer according to the top electrode and the sidewall spacers to form a bottom electrode and a bottom electrode via;
• and
• forming a top electrode via onto an upper surface of the top electrode, wherein the top electrode via is bisected by a first line that is laterally separated from a second line bisecting the conductive metal region.