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US 9,425,390 B2Granted
Select device for memory cell applications
AssigneeMicron Technology, Inc.
InventorsDavid H. Wells, Christopher D. Cardon, Caner Onal
Life of this patent
Estimating the term…
Abstract
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
Claims18
A memory cell, comprising:
- a select device including:
- a first electrode having a particular geometry;
- a semiconductor material formed on the first electrode;
- a second electrode having the particular geometry formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device;
- and
- an insulator material is formed on a sidewall of the first electrode, a sidewall of the semiconductor material, and a sidewall of the second electrode.
3 more elements
A memory cell, comprising:
- a select device including:
- a first electrode having a particular geometry;
- a semiconductor material formed on the first electrode;
- a second electrode having the particular geometry formed on the semiconductor material;
- and
- an insulator material formed on a sidewall of the first electrode, a sidewall of the semiconductor material, and a sidewall of the second electrode.
3 more elements
Dependencies are inferred from the claim text.