Method for making high-temperature superconducting film
AssigneesTsinghua University, Institute of Physics, Chinese Academy of Sciences
InventorsQi-Kun Xue, Xu-Cun Ma, Li-Li Wang, Xi Chen, Jin-Feng Jia, Ke He, Shuai-Hua Ji, Wen-Hao Zhang, Qing-Yan Wang, Zhi Li
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Abstract
A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.
Claims20
A method for making a high-temperature superconducting film, comprising:
- (S1) loading a SrTiO3 substrate into an ultra-high vacuum system;
- (S2) growing a single crystalline FeSe layer on a surface of the SrTiO3 substrate by molecular beam epitaxy;
- and
- (S3) growing a protective layer with a layered crystal structure by molecular beam epitaxy and covering the single crystalline FeSe layer by the protective layer.
A method for making a high-temperature superconducting film, comprising:
- (S1) acid etching a SrTiO3 substrate by hydrochloric acid for from about 30 minutes to about 60 minutes and annealing for from about 2.5 hours to about 3.5 hours at a temperature from about 950 degrees Celsius to about 1000 degrees Celsius;
- (S2) loading the SrTiO3 substrate in an ultra-high vacuum system;
- (S3) growing a single crystalline FeSe layer on a surface of the SrTiO3 substrate by molecular beam epitaxy;
- and
- (S4) growing a protective layer with a layered crystal structure by molecular beam epitaxy and covering the single crystalline FeSe layer by the protective layer.
A method for making a high-temperature superconducting film, comprising:
- (S1) loading a SrTiO3 substrate in an ultra-high vacuum system;
- (S2) growing a single crystalline FeSe layer on a surface of the SrTiO3 substrate by molecular beam epitaxy;
- and
- (S3) growing a single crystalline FeTe layer by molecular beam epitaxy and covering the single crystalline FeSe layer by the single crystalline FeTe layer.
Dependencies are inferred from the claim text.