Diode for a printable composition
AssigneeNthdegree Technologies Worldwide Inc.
InventorsMark David Lowenthal, William Johnstone Ray, Neil O. Shotton, Richard A. Blanchard, Brad Oraw
Life of this patent
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Abstract
An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns; a first terminal coupled to the light emitting region on a first side, the first terminal having a height between about 1 to 6 microns; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns.
Claims22
A diode comprising:
- a light emitting region having a lateral dimension less than or equal to 50 microns and a height of 1 micron to 7 microns;
- a first conductive terminal coupled to the light emitting region on a first side, the first conductive terminal having a height of at least 3 microns;
- and
- one or more second conductive terminals coupled to the light emitting region on a second side opposite the first side, the one or more conductive second terminals each having a height less than or equal to 2 microns;
- wherein the diode has a lateral dimension of 10 microns to 50 microns and a height of 5 microns to 25 microns.
A diode comprising:
- a light emitting region, the light emitting region having a lateral dimension of less than or equal to 50 microns measured opposing face-to-face and a height of 1 micron to 7 microns;
- a first conductive terminal coupled to the light emitting region on a first side, the first terminal having a height greater than or equal to 3 microns;
- at least one second conductive terminal coupled to the light emitting region on a second side opposite the first side, the at least one second terminal having a height less than or equal to 2 microns;
- and
- nitride passivation on one or more lateral sides of the light emitting region or the first conductive terminal;
- wherein the light emitting region comprises at least one inorganic semiconductor selected from the group consisting of:
- silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb, and mixtures thereof.
A diode comprising:
- a light emitting region having a lateral dimension of 6 microns to 50 microns and a height of 1 micron to 7 microns;
- a first conductive terminal coupled to the light emitting region on a first side, the first conductive terminal having a height greater than or equal to 3 microns;
- and
- one or more second conductive terminals coupled to the light emitting region on a second side opposite the first side, the one or more second conductive terminals each having a height less than or equal to 2 microns;
- wherein the diode has a lateral dimension of 10 microns to 50 microns, and a height of 5 microns to 25 microns.
Dependencies are inferred from the claim text.