Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a first conductive semiconductor base layer on a substrate;
• an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings therein and through which the first conductive semiconductor base layer is exposed;
• and
• a plurality of nanoscale light emitting structures in the plurality of openings, the nanoscale light emitting structures respectively including a first conductive semiconductor core on the first conductive semiconductor base layer, an active layer, and a second conductive semiconductor layer,
• wherein:
• an inner side wall of the opening is inclined at a predetermined angle such that a cross-sectional area of the opening is gradually increased in an upward direction,
• the plurality of nanoscale light emitting structures include a plurality of semi-polar surfaces, and
• a lower edge of a side portion of each nanoscale light emitting structure is on the inclined inner side wall of the opening.

A semiconductor light emitting device, comprising:

• a first conductive semiconductor base layer on a substrate;
• an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings overlying the first conductive semiconductor base layer;
• and
• a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer in the openings, the nanoscale light emitting structures each including a first conductive semiconductor core on the first conductive semiconductor base layer, an active layer on the first conductive semiconductor core, and a second conductive semiconductor layer on the active layer,
• wherein a lower part of each nanoscale light emitting structure has an inclined side portion of which a cross sectional area is reduced in a growth direction, and an upper part of each nanoscale light emitting structure has a rod form, and
• wherein a lower edge of a side portion of each nanoscale light emitting structure contacts an inner side wall of the opening in the insulating layer.