Epitaxy base, semiconductor light emitting device and manufacturing methods thereof
AssigneePlayNitride Inc.
InventorsYen-Lin Lai, Jyun-De Wu
Life of this patent
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Abstract
An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.
Claims4
A semiconductor light emitting device, comprising:
- an epitaxy base, comprising
- a substrate;
- and
- a nucleating layer, disposed on the substrate, wherein the nucleating layer is an aluminum nitride layer having a single crystal structure, an electron diffraction pattern of the nucleating layer comprises a plurality of dot patterns, each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1;
- a first type semiconductor layer, disposed on the nucleating layer;
- a buffer layer, disposed between the nucleating layer and the first type semiconductor layer;
- an active layer, disposed on the first type semiconductor layer, and
- a second type semiconductor layer, disposed on the active layer.
A method of manufacturing a semiconductor light emitting device, comprising:
- providing a substrate;
- forming a nucleating layer in a form of a single crystal structure on the substrate by sputtering, wherein the nucleating layer is an aluminum nitride layer, an electron diffraction pattern of the nucleating layer comprises a plurality of dot patterns, each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1;
- forming a first type semiconductor layer by performing a metal organic chemical vapor deposition process, wherein the first type semiconductor layer is disposed on the nucleating layer;
- forming a buffer layer by performing the metal organic chemical vapor deposition process, wherein the buffer layer is disposed between the nucleating layer and the first type semiconductor layer;
- forming an active layer by performing the metal organic chemical vapor deposition process, wherein the active layer is disposed on the first type semiconductor layer;
- and
- forming a second type semiconductor layer by performing the metal organic chemical vapor deposition process, wherein the second type semiconductor layer is disposed on the active layer.
Dependencies are inferred from the claim text.