Heterostructure including anodic aluminum oxide layer
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska
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Abstract
A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can be located between a semiconductor layer and another layer of material. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor layer. The layer of material can penetrate at least some of the plurality of pores and directly contact the semiconductor layer. In an illustrative embodiment, the layer of material is a conductive material and the anodic aluminum oxide is located at a p-type contact.
Claims20
A semiconductor structure comprising:
- a first semiconductor layer;
- an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the first semiconductor layer;
- and
- a layer of material immediately adjacent to the anodic aluminum oxide layer, wherein the layer of material covers the plurality of pores, penetrates at least some of the plurality of pores and directly contacts the first semiconductor layer, and wherein multiple pores of the plurality of pores are present within a current spreading length of the layer of material, and wherein the plurality of pores includes a set of open pores not penetrated by the layer of material.
An optoelectronic device comprising:
- an active region;
- a p-type layer located on a first side of the active region;
- an anodic aluminum oxide layer located directly on the p-type layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the p-type layer;
- and
- a p-type contact located directly on the anodic aluminum oxide layer, wherein the p-type contact is formed of a conductive material and the conductive material covers the plurality of pores, penetrates at least some of the plurality of pores and directly contacts the p-type layer, wherein multiple pores of the plurality of pores are present within a current spreading length of the conductive material, and wherein the plurality of pores includes a set of open pores not penetrated by the conductive material.
A method of fabricating a semiconductor structure, the method comprising:
- forming a first semiconductor layer;
- forming an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the first semiconductor layer;
- and
- forming a layer of material immediately adjacent to the anodic aluminum oxide layer, wherein the layer of material covers the plurality of pores, penetrates at least some of the plurality of pores and directly contacts the first semiconductor layer, wherein multiple pores of the plurality of pores are present within a current spreading length of the layer of material, and wherein the forming the layer of material results in the plurality of pores including a set of regions of mostly filled pores and a set of regions of mostly open pores.
Dependencies are inferred from the claim text.