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US 9,425,352 B2Granted
Semiconductor device, light emitting device and method of manufacturing same
AssigneeLG Siltron Inc.
InventorsYong Jin Kim, Dong Kun Lee, Doo Soo Kim
Life of this patent
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Abstract
Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.
Claims10
A semiconductor device comprising:
- a substrate;
- a plurality of rods aligned on the substrate, wherein the rods are formed from a first compound semiconductor;
- a plurality of particles disposed on the rods;
- a metal layer disposed on the substrate and filled etched area between the rods;
- a second compound semiconductor layer contacted on the metal layer, the rods, and the plurality of particles, wherein a height of the metal layer from the substrate is smaller than a height of the rods from the substrate;
- and
- an electrode connected to the metal layer, wherein each of the areas between the rods are connected to each other, and the metal layer is electrically connected to the electrode, and a porous layer is formed at a boundary area between the metal layer and the second compound semiconductor layer.
4 more elements
A semiconductor device comprising:
- a substrate;
- a plurality of rods aligned on the substrate, wherein the rods are formed from a first compound semiconductor;
- a plurality of particles disposed on the rods;
- a metal layer disposed on the substrate and filled etched area between the rods;
- a second compound semiconductor layer above the metal layer and contacting the rods and the plurality of particles, wherein a height of the metal layer from the substrate is smaller than a height of the rods from the substrate;
- and
- an electrode connected to the metal layer, wherein each of the areas between the rods are connected to each other, and the metal layer is electrically connected to the electrode, and a porous layer is formed at a boundary area between the metal layer and the second compound semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.