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US 9,425,351 B2Granted
Hybrid heterostructure light emitting devices
AssigneeWisconsin Alumni Research Foundation
InventorsZhenqiang Ma, Jung-Hun Seo
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Abstract
Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.
Claims20
A light-emitting device comprising:
- a hole injection layer comprising a single-crystalline p-type doped semiconductor material;
- an electron injection layer comprising a single-crystalline n-type doped semiconductor material;
- a light-emitting active region comprising intrinsic semiconductor materials disposed between the hole injection layer and the electron injection layer, the light-emitting active region comprising a multiple quantum well structure comprising alternating barrier layers and quantum well layers;
- and
- a current tunneling layer disposed between, and in contact with, the hole injection layer and the light-emitting active region or between, and in contact with, the electron injection layer and the light-emitting active region, the current tunneling layer comprising an inorganic material having a bandgap that is wider than the bandgaps of the doped semiconductor material and the intrinsic semiconductor material with which it is in contact;
- wherein the interface between the current tunneling layer and the doped semiconductor material and the interface between the current tunneling layer and the intrinsic semiconductor material do not have an epitaxial structure.
3 more elements
A method of making a light-emitting device, the method comprising:
- providing a multilayered semiconductor heterostructure comprising:
- an electron injection layer comprising a single-crystalline n-type doped semiconductor material;
- and
- a light-emitting active region comprising intrinsic semiconductor materials on the electron injection layer, the light-emitting active region comprising a multiple quantum well structure comprising alternating barrier layers and quantum well layers;
- depositing a current tunneling layer on the light-emitting active region;
- transferring a hole injection layer comprising single-crystalline p-type doped semiconductor material onto the current tunneling layer;
- and
- bonding the hole injection layer to the current tunneling layer;
- wherein the current tunneling layer comprises an inorganic material having a bandgap that is wider than the bandgaps of the p-type doped semiconductor material and the intrinsic semiconductor material with which it is in contact;
- and further wherein the interface between the current tunneling layer and the p-type doped semiconductor material and the interface between the current tunneling layer and the intrinsic semiconductor material do not have an epitaxial structure.
7 more elements
Dependencies are inferred from the claim text.