Epitaxial wafer and manufacturing method thereof

Abstract

A method for manufacturing an epitaxial wafer for manufacture of an image pickup device, wherein, before the growth of the epitaxial layer, a thickness X of a region where oxygen concentration in the epitaxial layer becomes 4×1017 atoms/cm3 or more after the manufacture of the image pickup device is calculated and, in the growth of the epitaxial layer, the epitaxial layer is grown with a thickness such that a thickness of a region where the oxygen concentration in the epitaxial layer is less than 4×1017 atoms/cm3 after the manufacture of the image pickup device is 6 μm or more in addition to the thickness X. As a result, it is possible to provide the epitaxial wafer in which an adverse effect of an impurity such as oxygen in the silicon wafer is not exerted on an image pickup device forming portion of the epitaxial layer and a manufacturing method thereof.

Dependencies are inferred from the claim text.