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US 9,425,343 B2Granted
Mechanisms for forming image sensor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yu Lai, Cheng-Ta Wu, Yeur-Luen Tu, Chia-Shiung Tsai, Jhy-Jyi Sze, Shyh-Fann Ting, Ching-Chun Wang
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Abstract
Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and one photodetector formed in the semiconductor substrate. The image sensor device also includes one gate stack formed over the semiconductor substrate. The gate stack includes multiple polysilicon layers.
Claims22
An image sensor device, comprising:
- a semiconductor substrate;
- at least one photodetector formed in the semiconductor substrate;
- isolation regions surrounding the photodetector;
- and
- at least one gate stack formed over the semiconductor substrate, wherein the at least one gate stack comprises a plurality of polysilicon layers, and the polysilicon layers together form a gate electrode of a transistor.
2 more elements
An image sensor device, comprising:
- a semiconductor substrate;
- a light-sensing region formed in the semiconductor substrate;
- a floating diffusion region formed in the semiconductor substrate;
- isolation regions surrounding the light-sensing region;
- and
- a gate stack interposing the light-sensing region and the floating diffusion region, wherein the gate stack comprises a stack of a plurality of semiconductor layers, and the semiconductor layers together form a gate electrode of a transistor.
3 more elements
Dependencies are inferred from the claim text.