Back to results
US 9,425,341 B2Granted
P-I-N photodiode with dopant diffusion barrier layer
AssigneeAgency for Science, Technology and Research
InventorsAndy Eu-Jin Lim, Tsung-Yang Liow, Patrick Guo-Qiang Lo
Life of this patent
Estimating the term…
Abstract
According to one aspect of the invention, there is provided a pin photodetector comprising a dopant diffusion barrier layer disposed within an active light absorbing region of the pin photodetector.
Claims17
A p-i-n photodetector comprising:
- a dopant diffusion barrier layer disposed within an active light absorbing region of the p-i-n photodetector, wherein the dopant diffusion barrier layer has a thickness less than 5 nm;
- a first semiconductor layer having a region doped to a first polarity;
- a second semiconductor layer having a region doped to a second polarity, the second polarity being opposite to the first polarity,
- wherein the dopant diffusion barrier layer is disposed between the first semiconductor layer and the second semiconductor layer for reducing doping of the first polarity into the region between the dopant diffusion barrier layer and the second semiconductor layer, and
- wherein the region doped to the first polarity of the first semiconductor layer has a higher doped portion and wherein the region doped to the second polarity of the second semiconductor layer has a higher doped portion, so that the higher doped portion of the second polarity and the higher doped portion of the first polarity form a pn junction of the p-i-n photodetector.
2 more elements
A method of fabricating a p-i-n photodetector, the method comprising:
- providing a first semiconductor layer having a region doped to a first polarity;
- providing a second semiconductor layer having a region doped to a second polarity, the second polarity being opposite to the first polarity;
- providing a dopant diffusion barrier layer between the first semiconductor layer and the second semiconductor layer, the dopant diffusion barrier layer having a thickness of less than 5 nm and configured to reduce doping of the first polarity into the region between the dopant diffusion barrier layer and the second semiconductor layer;
- doping the first semiconductor layer to a higher doped portion within the region doped to a first polarity;
- doping the second semiconductor layer to a higher doped portion within the region doped to a second polarity;
- and
- forming a pn junction of the p-i-n photodetector using the higher doped portion of the second polarity and the higher doped portion of the first polarity.
4 more elements
Dependencies are inferred from the claim text.