Photo active layer by silicon quantum dot and the fabrication method thereof
AssigneeKorea Research Institute of Standards and Science
InventorsKyoung Joong Kim, Seung Hui Hong, Jae Hee Park, Jong Shik Jang
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Abstract
Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots.
Claims6
A photo active layer comprising a silicon quantum dot layer and a conductive polycrystalline silicon layer, alternately stacked, the silicon quantum dot layer formed with a plurality of actively doped silicon quantum dots containing first conductive type impurities in a medium of silicon compound, and the conductive polycrystalline silicon layer doped by the first conductive type impurities which are the same conductive type impurities as those of the silicon quantum dots,
- wherein the silicon quantum dot layer is positioned on each of an uppermost portion and a lowermost portion of the photo active layer.
Dependencies are inferred from the claim text.