Junction field effect transistor cell with lateral channel region
AssigneeInfineon Technologies AG
InventorsJens Peter Konrath, Hans-Joachim Schulze
Life of this patent
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Abstract
A junction field effect transistor cell of a semiconductor device includes a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction. The lateral channel region includes first zones of a first conductivity type and second zones of a second conductivity type which alternate along a lateral direction perpendicular to the vertical direction. A pinch-off voltage of the junction field effect transistor cell does not depend, or only to a low degree depends, on a vertical extension of the lateral channel region.
Claims18
A semiconductor device, comprising:
- a junction field effect transistor cell comprising a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction,
- wherein the lateral channel region comprises first zones of a first conductivity type and second zones of a second conductivity type, the first and second zones alternating along a lateral direction perpendicular to the vertical direction, and the top and buried gate regions have the second conductivity type and the second zones directly adjoin the top gate region.
A junction field effect transistor, comprising:
- a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction,
- wherein the lateral channel region comprises first zones of a first conductivity type and second zones of a second conductivity type, the first and second zones alternating along a lateral direction perpendicular to the vertical direction, and the top and buried gate regions have the second conductivity type and the second zones directly adjoin the top gate region.
A method of manufacturing a semiconductor device, the method comprising:
- forming, in a first section of a process surface of a first epitaxial layer of a first conductivity type, at least one buried gate region of a second conductivity type;
- forming, on the process surface, a channel layer;
- forming, in the channel layer, first zones of a first conductivity type and second zones of a second conductivity type extending from a surface of the channel layer down to the at least one buried gate region, respectively;
- and
- forming a top gate region directly adjoining the first and second zones.
Dependencies are inferred from the claim text.