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US 9,425,324 B2Granted
Semiconductor device and channel structure thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCarlos H. Diaz, Jean-Pierre Colinge
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a composite structure is disclosed, which includes a channel structure having an inner core strut that extends substantially along a channel direction of the semiconductor device and an outer sleeve layer disposed on the inner core strut. The inner core strut mechanically supports the sleeve member across a channel length of the semiconductor device.
Claims16
A semiconductor device, comprising:
- a composite structure that comprises
- an inner core strut that comprises a gate stack;
- and
- an outer sleeve layer that is sleeved on the gate stack of the inner core strut and that comprises a two-dimensional (2-D) layered material, wherein the inner core strut mechanically supports the outer sleeve layer and wherein the outer sleeve layer has a central portion that defines a channel region and a pair of opposing end portions that respectively define source and drain regions.
1 more element
A semiconductor device, comprising:
- a composite structure that comprises
- an inner core strut that comprises a gate stack;
- and
- an outer sleeve layer that is sleeved on the gate stack of the inner core strut, wherein the inner core strut mechanically supports the outer sleeve layer;
- wherein a central portion of the outer sleeve layer defines a channel region;
- wherein a pair of opposing end portions of the outer sleeve layer respectively define source and drain regions.
3 more elements
A semiconductor device, comprising:
- a composite structure that comprises
- an inner core strut that comprises a gate stack;
- and
- an outer sleeve layer that is sleeved on the gate stack of the inner core strut, wherein the inner core strut mechanically supports the outer sleeve layer and wherein the outer sleeve layer has a central portion that defines a channel region and a pair of opposing end portions that respectively define source and drain regions;
- and
- a gate structure disposed on the outer sleeve layer at the channel region.
3 more elements
Dependencies are inferred from the claim text.