Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsEun-ha Lee, Anass Benayad, Tae-sang Kim, Kyoung-seok Son
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Abstract
A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device include forming a thin film including a metal oxynitride, and treating the thin film with inert gas ions so as to stabilize properties of the thin film. The metal oxynitride may include zinc oxynitride (ZnOxNy). The inert gas ions may include at least one of Ar ions and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like.
Claims15
A method of forming a thin film, the method comprising:
- forming a preliminary thin film including a metal oxynitride on a substrate;
- and
- treating the preliminary thin film with inert gas ions to form the thin film having stabilized properties, the thin film being a semiconductor film, wherein
- the treating of the preliminary thin film with the inert gas ions includes performing a sputtering process, the sputtering process including using an acceleration voltage of about 0.5 keV to about 4.0 keV.
A thin film, comprising:
- a metal oxynitride, wherein
- the thin film satisfies the following inequality of EQUATION (1),
- (Imax−Imin)/Iavg<0.3 EQUATION (1)
- where Imax and min denote a maximum intensity and a minimum intensity of a high-angle annular dark-field scanning transmission electron microscope (HAADF STEM) image of the thin film, respectively, and
- where Iavg denotes an average intensity of the HAADF STEM image.
A transistor, comprising:
- a channel layer formed of a metal oxynitride;
- a gate electrode corresponding to the channel layer;
- a source electrode connected to a first region of the channel layer;
- and
- a drain electrode connected to a second region of the channel layer, wherein
- the channel layer satisfies the following inequality of EQUATION (1)
- (Imax−Imin)/Iavg<0.3 EQUATION (1)
- where Imax and Imin denote a maximum intensity and a minimum intensity of a high-angle annular dark-field scanning transmission electron microscope (HAADF STEM) image of the channel layer, respectively, and
- where Iavg denotes an average intensity of the HAADF STEM image.
Dependencies are inferred from the claim text.